中文摘要：

采用离子束溅射技术并按正交试验方案生长了不同厚度以及在不同条件下退火的Ge纳米薄膜，用AFM图谱对薄膜的表面形貌进行了表征。结果表明厚度为2．8nm的Ge膜在600℃下退火10min，出现了高4nm、直径50nm左右的Ge岛，而10nm厚的Ge膜在720℃下退火120min，岛的数量较多且分布比较均匀。通过离子束溅射机理和沉积原子之间的扩散运动，对这些现象进行了较为合理的解释。

英文摘要：

According to orthogonal experimental design, a series of thin germanium films were grown by ion beam sputtering, then annealed. These films were characterized using AFM images. It was observed that the surface morphology of germanium films varied at different conditions. When the Ge film of 2.8nm thickness was annealed at 600℃ for 10min, Ge islands appeared with a lateral size of about 50nm and a height of about 4nm. When the Ge film of 10nm thickness was annealed at 720℃ for 120min, the amount of Ge islands increased and distributed uniform. Finally, the mechanism of ion beam sputtering and the diffusion between Si and Ge atoms were used to explain the results of morphology variation.