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High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material
  • ISSN号：1099-0062
  • 期刊名称：Electrochemical and Solid-state Letters
  • 时间：0
  • 页码：H59-H61
  • 相关项目：新型纳米复合相变材料的制备及其在相变存储器中的应用
作者： Xu, Jian'|Liu, Bo|Xu, Jian';an|Feng, Songlin|an|Rao, Feng|Song, Zhitang|Xia, MengJiao|Peng, Cheng|Gu, Yifeng|Zhu, Min|Wu, Liangcai|
同期刊论文项目
新型纳米复合相变材料的制备及其在相变存储器中的应用
期刊论文 59 专利 17
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