针对Flash写前需擦除,读写I/0开销不均衡等固有缺陷,研究面向闪存缓冲区管理,对提高基于Flash的固态硬盘(Solid State Disk,SSD)访问性能以及降低系统功耗具有重要理论意义和应用价值。文章提出了一种新型存储架构,并实现了一种适用于SSD的基于相变存储器(Phase Change Memory,PCRAM)数据页聚簇的缓冲算法。文章中详细介绍了基于PCRAM聚簇的缓冲算法关键技术及原理,充分阐述算法相关元数据、存储数据、FTL管理与控制以及详尽分析了缓冲算法的读、写操作控制原理,最后通过F1ashSim仿真平台实现SSD写缓冲。基于仿真结果与传统缓冲算法性能比对,分析得出该缓冲算法可降低SSD随机写次数和SSD数据存储分散性,并提升SSD响应速度,降低系统功耗。
For the inherent characteristics of flash memory such as erase before write, the I/O overhead of reading and writing unbalance, and so on, studying the buffer management of flash memory has important theoretical significance and application value to improve access performance and reduce system power consumption of Flash-based SSD ( Solid State Disk,SSD ). It has presented a new storage architecture and implemented a buffer algorithm used for SSD ,which is based on the cluster of pcram ( Phase Change Memory, PCRAM ) pages. The key technology and the principle of the algorithm based on cluster of pcram pages has been described in detail, the metadata, storage data, FTL management, read and write operations control principle for the buffer algorithm has been fully articulated and the writing of SSD buffer management is implemented on basis of Flashsim platform. Compared the performances of traditional buffer algorithm and the new algorithm, it indicates that the buffer algorithm based on the cluster of pcram pages can reduce the random write times and the data dispersion of SSD and improve the average response rate of SSD and reduce system power consumption.