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Scaling properties of phase-change line memory
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：0
  • 页码：-
  • 分类：TP391.9[自动化与计算机技术—计算机应用技术;自动化与计算机技术—计算机科学与技术] U471.13[机械工程—车辆工程;交通运输工程—载运工具运用工程;交通运输工程—道路与铁道工程]
  • 作者机构：[1]State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 相关基金：Project supported by the National Integrate Circuit Research Program of China （Grant No. 2009ZX02023-003）, the National Key Basic Research Program of China （Grant Nos. 2010CB934300, 2011CBA00602, and 2011CB932800）, the National Natural Science Foundation of China （Grant Nos. 60906003, 60906004, 61006087, and 61076121）, and the Science and Technology Council of Shanghai of China （Grant No. 1052nm07000）.
  • 相关项目：新型纳米复合相变材料的制备及其在相变存储器中的应用
作者： Du Xiao-Feng|Song San-Nian|Song Zhi-Tang|Liu Wei-Li|Lu Shi-Long|Gu Yi-Feng|Xue Wei-Jia|Xi Wei|
关键词： 扩展属性, 变线, 内存, 离子束沉积, 存储设备, 电气性能, 功率消耗, 三维模拟, phase-change memory, line structure, scaling properties, three-dimensional simulation
中文摘要：

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V ) and resistance-voltage (R-V ) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

英文摘要：

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current~oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
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  • 被引量:406