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中文摘要：
ZnO是一种新兴的的宽禁带半导体材料，相对于传统的宽禁带材料有很多的优势。在相对成本低廉的岛衬底上生长ZnO薄膜是现在攻关的热门课题。目前用缓冲层方法生长ZnO薄膜取得了一些突破。本文利用直流溅射，先在Si衬底上溅射一层ZnO多晶薄膜，通过对直流溅射时间的控制，可以得到不同厚度的ZnO缓冲层。再利用MOCVD设备生长高质量的ZnO薄膜。通过研究发现，直流溅射ZnO薄膜的厚度对于最终的薄膜质量有很大的影响。随着缓冲层的引入，双晶衍射XRD的摇摆半宽有显著下降，并且随着最终ZnO薄膜质量上升，光致发光也有显著的提升。可见缓冲层的引入对ZnO／Si薄膜的质量和发光强度有很大的贡献。
英文摘要：
Zinc oxide （ZnO） is a Ⅱ -Ⅵ compound semiconductor material with a wide direct band gap of 3.3eV at room temperature. Recently, ZnO films have attracted more attention due to their ultraviolet photoluminescence. Growing ZnO thin film on the Si substrate is a present popular topic. At present, the technology of growing ZnO thin film with buffer layer has made progress. Buffer layers prepared on Si substrates by DC reactive sputtering system is reported in this paper. The thickness of buffer layer depends on the sputtering time. Then the high quality ZnO thin films were grown on the Si substrates by low pressure metal-organic chemical vapor deposition （LP-MOCVD） with sputtering buffer layers. The effect of sputtering buffer layer thickness on the structure and luminescence properties was investigated. The fuli width at half maximum （FWHM） of rocking curve of ZnO （ 002 ） peak was reduced by using sputtering buffer layer and annealing. And the intensity of luminescence was also increased.
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