欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
在MOCVD设备中采用改进的射频辅助生长装置，通过裂解N2及N-Al共掺杂的方法进行ZnO的p型掺杂研究。通过二次离子质谱（SIMS）、X射线衍射（XRD）、原子力显微镜（AFM）、光致发光（PL）谱等方法分析了薄膜中N杂质的浓度，以及射频功率与晶体质量、表面形貌以及光学特性之间的关系，并与Al掺杂和N掺杂的ZnO薄膜进行对比。实验结果表明，N掺杂的浓度高达10^20cm^-3；N-Al共掺杂极大地增加了ZnO的成核速率，其主要原因是N离化所起的作用；N-Al共掺的ZnO薄膜显示出P型性质，而N掺杂的ZnO薄膜由于N原子处于非激活状态而呈现高阻，这说明N-Al共掺杂对ZnO中N原子的活化起到一定作用。
英文摘要：
In past, many papers reported that it was difficult to obtain p-ZnO through N2 splitting. We studies the properties of ZnO films through N2 splitting and N-Al co-doping by our MOCVD system which was improved with RF assisted equipment. The data of SIMS showed that the N concentration reached to 102^20-21 cm^ -3 in ZnO films. On this basic, we have studied the growth and photoelectric-properties of N-Al co-doped ZnO films, the effect of RF power on the crystal quality, surface morphologies and optical properties, through XRD, AFM and PL methods, to compare the properties of N-Al co-doped ZnO films. The result of our experiments indicates that the growth rate of ZnO films increases with increasing N splitting, N-Al co-doped ZnO films display p-type property, but the resistance of N doped ZnO films was rather high which was caused by non-activated N in ZnO films, this revealed that the N-Al co-doping facilitates the activation of N in ZnO films.
同期刊论文项目
同项目期刊论文
Metallorganic chemical vapor deposition of ZnO films on carbonized Si(111) and Si(100) substrates (v
Deep ultraviolet emission of ZnO films prepared by RF magnetron sputtering at changing substrate tem
Effect of growth temperature on the characteristics of ZnO films grown on Si(111) substrates by meta
Effects of SiC buffer on the structural and photoelectrical properties of ZnO thin films grown on Si
Studies of Mn/ZnO (000 ) Interfacial Formation and Electronic Properties with Synchrotron Radiation,
期刊信息
位置：