欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
使用脉冲激光淀积（PLD）技术在n型Si衬底上沉积氧化锌（ZnO）薄膜,在O2气氛下对样品进行了500℃（Sample1,S1）,600℃（Sample2,S2）,700℃（Sample3,S3）和800℃（Sample4,S4）退火,随后进行了X射线衍射（XRD）谱,椭偏光折射率,热激电流（TSC）和电容-电压（C-V）的测量。研究发现：S1中晶界的电子陷阱由高浓度的深能级杂质（Zni）提供的电子填充,该能级位于ET=EC-0.24±0.08eV。S3中出现与中性施主（D0）有关的深能级中心,其ET=EC-0.13±0.03eV,推测D0的出现与高温氧气条件退火下晶界处形成的复合体缺陷有关。XRD和椭偏光折射率测量结果表明：氧气对ZnO薄膜微结构的修饰是改变ZnO/Si结构光电特性的主要因素。
英文摘要：
ZnO/n-Si heterostructures were fabricated using pulsed laser deposition （PLD）,and then samples were annealed at 500 ℃ （S1）,600 ℃ （S2）,700 ℃ （S3） and 800 ℃ （S4） at oxygen ambience for 1 h,respectively.ZnO film deposited on Si substrates usually forms into polycrystalline structure,leading to barrier at the ZnO grain boundary.The grain boundary has a great influence on photoelectricity of ZnO film,but so far as we known,there are no reports in detail about this aspect.In order to clarify the influence of grain boundary variation on the photoelectricity characteristics of ZnO films,we performed thermally stimulated current （TSC）,current-voltage （C-V）,X-ray diffraction （XRD） and ellipsometry measurements. The results showed that a deep level center located at EC-0.24±0.08 eV is obtained by TSC in S1,which is related to an intrinsic defect.The surface states of the ZnO grains,which have acceptor behavior and capture electrons from defects,result in the formation of grain barriers.A neutral donor deep level center （D^0） located at EC-0.13±0.03 eV appears as the annealing temperature reaches to 700 ℃.It could be due to the D^0 complex defect in grain boundary that has a relationship with high temperature oxygen treatment.Combined with XRD and ellipsometry results,it was evident that,after oxygen annealing,the microstructure of ZnO films is improved and the stoichiometric deviation which dominated the photoelectricity characteristics of the ZnO films.
同期刊论文项目
同项目期刊论文
Metallorganic chemical vapor deposition of ZnO films on carbonized Si(111) and Si(100) substrates (v
Deep ultraviolet emission of ZnO films prepared by RF magnetron sputtering at changing substrate tem
Effect of growth temperature on the characteristics of ZnO films grown on Si(111) substrates by meta
Effects of SiC buffer on the structural and photoelectrical properties of ZnO thin films grown on Si
Studies of Mn/ZnO (000 ) Interfacial Formation and Electronic Properties with Synchrotron Radiation,
期刊信息
位置：