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中文摘要：
用LPMOCVD方法在P—Si（111）衬底上异质外延生长SiC，用碳化方法生长出具有单晶结构的3C—SiC薄膜，研究了开始碳化温度、丙烷流量和碳化时间对结晶质量的影响．结果表明，在较低的温度开始碳化不利于丙烷的分解，不能形成很好的过渡层；碳化时丙烷流量过大会造成碳污染，碳化时间过长使过渡层的结晶质量降低．最佳的碳化条件为：开始碳化温度1150℃，碳化时间和碳化时丙烷的流量分别为8min和2sccm．
英文摘要：
Heteroepitaxial growth of SiC on p-Si（111） substrates were performed via low-pressure chemical vapor deposition process. The effects of different carbonized temperature, the flow rate of C3H8 and the time of carbonization on the crystallinity of 3C-SiC films were discussed. Results showed that the lower carbonization temperature was unfavourable to the decompose of C3H8,contamination of carbon was erneraged with larger flow rate of C3H8 and longer carbonization time worsened the quality of buffer layer. The best carbonized condition were starting carbonization at 1150 ℃ and the duration and the flow rate of C3H8 during carbonization were 8 min and 2 sccrn respectively. The single crystal 3C-SiC film could be obtained under the best carbonized condition.
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