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中文摘要：
用射频磁控溅射在硅衬底上淀积氧化锌薄膜，并对样品分别作氮气、空气、氧气等不同条件下退火处理。为研究退火气氛对ZnO／Si薄膜中缺陷以及折射率的影响，由深能级瞬态谱（DLTS）以及椭偏测量方法进行了检测。椭偏测量结果表明相对原始生长的样品，在氮气和空气退火使ZnO薄膜折射率下降，但氧气中退火使折射率升高。我们对折射率的这种变化机理进行了解释。DLTS测量得到一个与Zni^＊＊相关的深能级中心E1存在，氧气气氛退火可以消除E1能级。在氮气退火情况下Zni^＊＊的存在对抑制V0引起的薄膜折射率下降有利。
英文摘要：
We present a method that ZnO films have been deposited by radio-frequency （RF） reactive sputte- ring on Si substrates. Then the films were annealed in air, N2 or O2 for 1 hour respectively, and the optic and electricity characteristics of them were studied using ellipsometry and DLTS. The result shows that the refractive index of ZnO films is decreased with the descent of oxygen. And it is invariable with annealing temperature under O2. We explained and gave the mechanism about the invariance of refractive index. There has a deep level center related with Zni defect measured by DLTS. The deep levels of E1 was eliminated when annealed under 02. When annealing under N2, the existence of Zni restrained Vo that favor decrea- sing the refractive index of ZnO films. Under certain annealing temperature and atmosphere the optic and electric characteristics of ZnO film can be improved obviously.
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