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中文摘要：
通过低压化学气相沉积方法,在Si（100）衬底上生长了高度择优取向的3C-SiC （100）薄膜。SiC （200）峰的摇摆曲线表明SiC薄膜的结晶质量随着丙烷气体引入温度（Tgi）的升高而增加。选区电子衍射像表明高Tgi下生长的薄膜比低Tgi下生长的薄膜具有更好的取向。典型的SiC薄膜高分辨像中观察到了孪晶和层错。表面场发射扫描电镜像表明随着Tgi的升高,SiC薄膜的表明形貌发生了改变。
英文摘要：
3C-SiC （100） films with preferred orientation were grown on Si （100） substrates by low-pressure chemical vapor deposition （LPCVD）. The rocking curves of the SiC （200） peaks show that the crystalline quality of the films is improved with increasing temperature of propane introduction （abbreviated Tgi）. Representative Selected area electron diffraction （SAED） patterns show that the film carbonized at higher Tgi has more preferable orientation than that carbonized at relatively low Tgi. Defects （stacking faults） were observed through the typical high resolution transmitted electron microscopy （HRTEM） image in the film. Field emission scanning electron microscopy （FESEM） images indicate that the surface morphologies of the films vary with increasing Tgi.
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