中文摘要：

利用射频等离子体辅助分子束外延（RF-MBE）技术在蓝宝石衬底上外延了铝铟镓氮（AlInGaN）四元合金,通过改变Al源的束流生长了不同组分的AlInGaN四元合金,材料生长过程中采用反射式高能电子衍射（RHEED）进行了在位检测.通过扫描电镜（SEM）、卢瑟福背散射（RBS）、X射线衍射（XRD）和阴极荧光（CL）等测试手段表征了AlInGaN四元合金的结构和光学特性.研究结果表明：在GaN层上生长AlInGaN外延层时,外延膜呈二维生长;当铝炉的温度为920℃时,外延AlInGaN四元合金外延薄膜中Al/In接近4.7,X射线衍射摇摆曲线的半高宽最小为5arcmin,四元合金的阴极荧光发光峰的半高宽为25nm,AlInGaN四元合金外延层具有较好的晶体质量和光学质量.

英文摘要：

AlInGaN quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy （RF-MBE）. AIInGaN quaternary alloys with different compositions were acquired by changing the Al cell＇ s temperature. The streaky RHEED patterns were observed during AIInGaN quaternary alloys growth. Scanning Electron Microscope （SEM）, Rutherford back-scattering spectrometry （RBS）, X-Ray diffraction （XRD） and Cathodoluminescence （CL） were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AIInGaN quaternary alloys grow on the GaN buffer in the layer-by-layer growth mode. When the Al cell＇ s temperature is 920℃, the Al/In ratio in the AIlnGaN quaternary alloys is about 4, 7, and the AllnGaN can acquire better crystal and optical quality. The X-ray and CL full-width at half-maximum （FWHM） of the AIlnGaN are 5arcmin and 25nm, respectively.