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AlGaN/GaN型气敏传感器对于CO的响应研究
  • ISSN号:0253-4177
  • 期刊名称:半导体学报
  • 时间:0
  • 页码:132-135
  • 语言:中文
  • 分类:TN304[电子电信—物理电子学]
  • 作者机构:[1]中国科学院半导体研究所,北京100083
  • 相关基金:中国科学院知识创新工程(批准号:YYYJ-0701-02),国家自然科学基金(批准号:60576046,60606002)及国家重点基础研究发展规划(批准号:2002CB311903,2006CB604905,513270505)资助项目
  • 相关项目:GaN基气敏传感器材料和器件研究
中文摘要:

研究了基于AlGaN/GaN型结构的气敏传感器对于CO的传感性.制备出AlGaN/GaN型气敏传感器器件,并测试得到了器件在50℃时对于不同浓度(1%,9000,8000,5000和1000ppm)的CO的响应情况;测试并分析了1%CO在50和100℃下响应度的差异,计算了通入1%CO前后器件的肖特基势垒高度的变化和灵敏度随电压的分布关系.结果表明,器件的灵敏度强烈依赖于器件的工作温度和通入的气体浓度,随着温度和浓度的增加,器件的灵敏度呈单调增加,器件在100℃空气气氛中表现出了良好恢复性能.

英文摘要:

This paper reports gas sensors based on an AlGaN/GaN structure for CO detection. The devices have been fabricated and showed remarkable sensitivity at measured temperatures. Response characteristics of the devices have been measured under different CO concentrations (1% ,9000ppm, 8000ppm, 5000ppm, 1000ppm) at 50℃. For the sake of comparison, the response of the device in- duced by 1% CO at 100℃ has also been measured. The sensitivity and variation of Schottky barrier height induced by 1% CO have been calculated at 50℃ and 100℃, respectively. Finally, the sensitivity strongly depends on the temperature and the CO concentration and increased as the temperature and concentration increased.

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