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Germanium-tin n+/p junction formed using phosphorus ion implant and 400 °C rapid thermal ann
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2012.9.24
  • 页码：1529-1531
  • 相关项目：硅基锗锡合金材料外延生长机理研究
作者： C. Xue|B. Cheng|G. Han|Y.-C. Yeo|
同期刊论文项目
硅基锗锡合金材料外延生长机理研究
期刊论文 35
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