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High hole mobility GeSn on insulator formed by self-organized seeding lateral growth
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D: Applied Physics
  • 时间：2015.11.11
  • 页码：-
  • 相关项目：硅基锗锡合金材料外延生长机理研究
作者： Xue, Chunlai|Zuo, Yuhua|Cheng, Buwen|Wang, Qiming|
同期刊论文项目
硅基锗锡合金材料外延生长机理研究
期刊论文 35
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