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Kinetic investigation on the confined etching system of n？type Gallium arsenide by scanning electroc
  • ISSN号：1932-7447
  • 期刊名称：Journal of Physical Chemistry C
  • 时间：2014
  • 页码：18604-18611
  • 相关项目：微/纳光学阵列元件的约束刻蚀剂层加工技术与系统的基础研究
作者： Zhang J|Jia JC|Han LH|Yuan Y|Tian ZQ|Tian ZW|Zhan DP|
同期刊论文项目
微/纳光学阵列元件的约束刻蚀剂层加工技术与系统的基础研究
期刊论文 45 会议论文 27
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