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中文摘要：
对GP大信号模型及其参数提取方法进行了研究，并对发射极尺寸为2pm×19μm的InP／InGaAsHBT进行了建模。模型的仿真结果表明，所建模型能较为精确地表征实际HBT器件的直流和高频小信号特性。基于建立的HBT大信号模型设计并制备出InP基PIN＋HBT单片集成光接收前端，经在片测试，集成前端的3dB带宽可达3GHz。
英文摘要：
The model and parameters-extraction method of GP large-signal were studied. Then the InP/InGaAs HBT with an emitter size of 2μm×19μm was modeled based on the above results. By comparison of the simulated results with measured date, the model could correctly characterize DC and high-frequency small-signal of the fabricated HBT devices. InP-based PIN＋ HBT monolithic integrated photoreceiver front-end was fabricated using the HBT large-signal model, and the 3 dB bandwidth of 3 GHz was observed from.
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