Size-independent growth of pure zinc blende GaAs nanowires
- ISSN号：1674-4926
- 期刊名称：《半导体学报：英文版》
- 时间：0
- 分类：O471.5[理学—半导体物理;理学—物理] TB383[一般工业技术—材料科学与工程]
- 作者机构：[1]Key Laboratory of Information Photonics & Optical Communication,Ministry of Education, Beijing University of Posts and Telecommunications,Beijing 100876,China
- 相关基金：Project supported by the Basic Research on Compatible Heterogeneous Integration and Functional-Microstructure Assemblage for the Development of Novel Optoelectronic Devices China（No.2010CB327600）; the 111 Program of China（No.B07005） the Program of Key International Science and Technology Cooperation Projects（No.2006DFB 11110）; the New Century Excellent Talents in University （NCET-08-0736）; the National High Technology R ＆ D Program of China（Nos.2009AA03Z405 2009AA03Z417）; the Chinese Universities Scientific Fund（Nos.BUPT2009RC0409 BUPT2009RC0410）; the Program for Changjiang Scholars and Innovative Research Team in University MOE（No.IRT0609）.
关键词：
闪锌矿结构, 纳米线, 砷化镓, 生长, 纯锌, 化学气相沉积法, 有机金属, 原子扩散, GaAs nanowire, supersatuation, pure zinc blende structure, metalorganic chemical vapor deposition
中文摘要：
Corresponding author. Email： shineyea@foxmail.com
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