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Experimental investigation of Quasi-SOI MOSFET for highly scaled devices
  • 所属机构名称：北京大学
  • 会议名称：6th International Conference on Semiconductor Technology, ISTC2007
  • 成果类型：会议
  • 会场：Shanghai
  • 相关项目：集成电路工艺研究（包括ＣＡＭ）
作者： Wang,Y.|Feng,C.|Huang,R.|Chan,M.|Zhang,X.|Xiao,H.|Tian,Y.|
同会议论文项目
集成电路工艺研究（包括ＣＡＭ）
期刊论文 55 会议论文 53 获奖 2 专利 35
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