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Simulation of Line-Edge Roughness Effects in Silicon Nanowire MOSFETs
  • 所属机构名称：北京大学
  • 会议名称：Proceedings of International Conference on Simulation and Semiconductor Process and Devices (SISPAD)
  • 成果类型：会议
  • 相关项目：集成电路工艺研究（包括ＣＡＭ）
作者： Ru Huang|Tao Yu|Runsheng Wang|
同会议论文项目
集成电路工艺研究（包括ＣＡＭ）
期刊论文 55 会议论文 53 获奖 2 专利 35
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