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Impacts of non-negligible electron trapping/detrapping on the NBTI characteristics in silicon nanowi
  • 所属机构名称：北京大学
  • 会议名称：IEEE International Electron Devices Meeting (IEDM 2008)
  • 成果类型：会议
  • 相关项目：集成电路工艺研究（包括ＣＡＭ）
作者： Ru Huang|Donggun Park|Liangliang Zhang|Jing Zhuge|Dong-Won Kim|Yangyuan Wang|Runsheng Wang|
同会议论文项目
集成电路工艺研究（包括ＣＡＭ）
期刊论文 55 会议论文 53 获奖 2 专利 35
同项目会议论文
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