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中文摘要：
在（0001）面的蓝宝石衬底上用低压MOCVD法生长P型GaN外延层．对P型GaN薄膜用180keV的Mn^＋离子注入进行磁性粒子掺杂，注入剂量保持为5．0×1015cm^-2，但注入时P型GaN分别处于室温、300℃和500℃．对注入的样品在N2气流中进行快速热退火处理，温度为850℃、时间为30s．用超导量子干涉仪（SQUID）对样品的磁性进行了分析，室温下注入样品的磁响应较弱，未发现铁磁性；在300℃下注入的样品中发现有较强的铁磁性，更高的500℃的注入温度并不能进一步增强铁磁性．结合用X射线衍射（XRD）对不同注入温度样品的结构研究，揭示只有适当的注入温度（300℃）才有利于GaN晶格的恢复和铁磁性的产生。
英文摘要：
Wurtzite p-type GaN epilayer, which has a thickness of 0.5 μm, is prepared by MOCVD on GaN buffer with sapphire substrate. Magnetic doping of the p-type GaN epilayer is achieved by 180 keV Mn^＋ ions implantation. The GaN films are all implanted with dose of 5 × 1015cm^-2, while are kept at different temperatures during the implantation, i.e. room temperature, 300℃ and 500℃, respectively. After an annealing step at 850℃for 30s in flowing N2, the magnetism of the Mn^＋-implanted p-GaN films is investigated by superconducting quantum interference device （SQUID）. In the sample implanted at room temperature the magnetism is weak and no ferromagnetism is found. In the 300℃ implanted p-GaN film ferromagnetism is found with obvious hysteresis loop. Further increase of the implantation temperature to 500℃ brings about no increase in ferromagnetism. Combined with the structural characteristics of the Mn^＋ implanted p-GaN films studied by X-ray diffraction （XRD）, one concludes that only suitable increase of the implantation temperature could be beneficial to the recovery of implantation defects and the generation of ferromagnetism in the Mn^＋ implanted p-GaN films.
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