欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
对在蓝宝石衬底上MOCVD生长的P型GaN薄膜，用能量为90keV的Mn^＋离子进行室温下的磁性离子注入掺杂，注入剂量为1×10^15～5×10^16cm^-2．对注入的样品在N2气流中经800℃下0～90s时间不等的快速热退火处理．对样品的电、磁特性分析发现在注入剂量较低时（≤1×10^16cm^-2），样品中的强铁磁性对应着高电阻率，弱铁磁性对应着低电阻率；而在5×10Mcm^-2的高注入剂量下则没有这样的规律。通过对退火条件的研究，发现在800℃下退火45s的样品具有较强的铁磁性和较低的电阻率，而退火90s的样品中铁磁性减弱，电阻率升高，揭示出注入剂量和退火条件是在对P型GaN薄膜进行磁性离子注入掺杂过程中的两个重要控制参量．
英文摘要：
The magnetic doping of wurtzite p-GaN films, which are grown on sapphire substrates by MOCVD, is achieved by 90keV Mn^＋ ions implantation at room temperature. The implantation doses are set between1×10^15 and 5×10^16cm^-2. After an annealing step at 800℃ for 0～90s in flowing N2, the magnetic and electric characteristics of the implanted p-GaN films are studied. With relatively low implantation doses （≤1×10^16cm^-2）, the dose dependent ferromagnetism is propositional to resistivity, i.e. the sample with strong ferromagnetism has high resistivity, while the sample with weak ferromagnetism shows low resistivity. But such regularity does not hold for p-GaN films with 5×10Mcm^-2 Mn^＋-implantation. By the study of annealing conditions, it is found that the sample annealed for 45s has both strong ferromagnetism and low resistivity, while the sample annealed for 90s has decreased ferromagnetism and increased resistivity. The results reveal the remarkable influence of implantation doses and annealing conditions in the magnetic doping processes of p-GaN films by Mn^＋ ions implantation.
同期刊论文项目
同项目期刊论文
Formation of C3N4 Nanocrystals in Ti-Doped Carbon Nitride Films Prepared by Cathode Arc-Assisted Mid
Controlling growth of ZnO quantum dots embedded in silica by Zn/F sequential ion implantation and su
Structure and tribological properties of Ti-containing amorphous carbon coatings prepared by cathode
Characterization and properties of Ti-containing amorphous carbon nanocomposite coatings prepared by
Cathodic arc enhanced middle- frequency magnetron sputtering system for deposition of superhard prot
Fabrication and annihilation of nanovoids in Cu nanoclusters by ion implantation into silica and sub
The use of SEM-EBSD to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP he
Synthesis of Ti-Si-N nanocomposite coatings by cathodic arc assisted middle-frequency magnetron sput
Effect of bias voltage on the structure and hardness of Ti-Si-N composite coatings synthesized by ar
Effect of bias voltage on the structure and mechanical properties of thick CrN coatings deposited by
Evidence for the Correlation Between Si Content and Crystallization of TiN in Ti-Si-N Composite Coat
期刊信息
位置：