位置：成果数据库 > 期刊 > 期刊详情页
Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
  • ISSN号：1674-7321
  • 期刊名称：SCIENCE CHINA-TECHNOLOGICAL SCIENCES
  • 时间：2012.12.12
  • 页码：3401-3404
  • 相关项目：新型高功率4H-SiC JBS二极管的研究
作者： Song QingWen|Zhang YuMing|Zhang YiMen|Tang XiaoYan|
同期刊论文项目
新型高功率4H-SiC JBS二极管的研究
期刊论文 14 会议论文 1 专利 3
同项目期刊论文
Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode
Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier
Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky d
4H-SiCn-MOSFET新型反型层迁移率模型
Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode
Simulation study on 4H-SiC power devices with high-k dielectric FP terminations
Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielec
Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode
Temperature-dependent characteristics of 4H-SiC junction barrier Schottky diodes
套刻偏差对4H-SiC浮动结结势垒肖特基二极管的影响研究
First-principles calculation on the concentration of intrinsic defects in 4H-SiC
4H—SiC n—MOSFET新型反型层迁移率模型
N型4H—SiC低温拉曼光谱特性