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Comment on "Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the
ISSN号:0003-6951
期刊名称:Applied Physics Letters
时间:0
页码:1362-1367
语言:英文
相关项目:Si基高效率发光新结构制备研究
作者:
Zhou, Zhiwen|Lai, Hongkai|Yu, Jinzhong|Chen, Songyan|Li, Cheng|
同期刊论文项目
Si基高效率发光新结构制备研究
期刊论文 28
会议论文 2
专利 1
同项目期刊论文
Investigation of passivation of porous silicon at room temperature
太赫兹Si/SiGe量子级联激光器波导模拟(英文)
P型张应变Si/SiGe量子阱红外探测器的能带设计
红外微腔探测器中金属支撑柱的制备工艺研究
Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-i
Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal an
The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by u
Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained
Oxidation behavior of strained SiGe layer on silicon substrate in both dry and wet ambient
硅基外延锗金属-半导体-金属光电探测器及其特性分析
太赫兹Si/SiGe量子级联激光器波导模拟
GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off
Ge组分对SiGeHBT直流特性的影响
UHV/CVD法生长硅基低位错密度厚锗外延层
干法氧化制备SiGe弛豫缓冲层及其表征
Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells