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Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal an
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：2660-2664
  • 语言：英文
  • 相关项目：Si基高效率发光新结构制备研究
作者： Kang, J. Y.|Lai, Hongkai|Zhang, Yong|Li, Cheng|Liao, Linghong|Chen, Songyan|
同期刊论文项目
Si基高效率发光新结构制备研究
期刊论文 28 会议论文 2 专利 1
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