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Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-i
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：284-289
  • 语言：英文
  • 相关项目：Si基高效率发光新结构制备研究
作者： Chen, Yanghua|Zhou, Zhiwen|Li, Cheng|Chen, Songyan|Lai, Hongkai|
同期刊论文项目
Si基高效率发光新结构制备研究
期刊论文 28 会议论文 2 专利 1
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