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P型张应变Si/SiGe量子阱红外探测器的能带设计
  • ISSN号：0253-4177
  • 期刊名称：半导体学报
  • 时间：0
  • 页码：5801-5815
  • 语言：中文
  • 相关项目：Si基高效率发光新结构制备研究
作者： 赖虹凯|陈松岩|李成|邓和清|林桂江|余金中|
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Si基高效率发光新结构制备研究
期刊论文 28 会议论文 2 专利 1
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