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The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by u
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：0
  • 页码：2508-2513
  • 语言：英文
  • 相关项目：Si基高效率发光新结构制备研究
作者： Li, Cheng|Chen, Songyan|Yu, Jinzhong|Lai, Hongkai|Zhou, Zhiwen|
同期刊论文项目
Si基高效率发光新结构制备研究
期刊论文 28 会议论文 2 专利 1
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