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Oxidation behavior of strained SiGe layer on silicon substrate in both dry and wet ambient
  • ISSN号：0013-4651
  • 期刊名称：JOURNAL OF THE ELECTROCHEMICAL SOCIETY
  • 时间：0
  • 页码：H156-H159
  • 语言：英文
  • 相关项目：Si基高效率发光新结构制备研究
作者： Lai, Hongkai|Chen, Songyan|Zhang, Yong|Cai, Kunhuang|Li, Cheng|
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Si基高效率发光新结构制备研究
期刊论文 28 会议论文 2 专利 1
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