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Growth of large domain epitaxial graphene on the C-face of SiC
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2012.11.11
  • 页码：-
  • 相关项目：反常带隙半导体量子受限结构中自旋特性的调控
作者： Zhang, Rui|Dong, Yunliang|Kong, Wenjie|Han, Wenpeng|Tan, Pingheng|Liao, Zhimin|Wu, Xiaosong|Yu, Dapeng|
同期刊论文项目
反常带隙半导体量子受限结构中自旋特性的调控
期刊论文 80
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