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Gate-controlled electron-electron interactions in an In0:53Ga0:47As/InP quantum well structure (vol
  • ISSN号：0038-1098
  • 期刊名称：Solid State Communications
  • 时间：2010.5.5
  • 页码：901-901
  • 相关项目：反常带隙半导体量子受限结构中自旋特性的调控
作者： Zhou, Y. M.|Gao, K. H.|Yu, G.|Zhou, W. Z.|Lin, T.|Guo, S. L.|Chu, J. H.|Dai, N.|
同期刊论文项目
反常带隙半导体量子受限结构中自旋特性的调控
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