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Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2011.7.7
  • 页码：-
  • 相关项目：反常带隙半导体量子受限结构中自旋特性的调控
作者： Austing, D. G.|Gao, Kuanghong|Wei, Laiming|Liu, Xinzhi|Hu, Gujin|Yu, Guolin|Lin, Tie|Guo, Shaoling|Wei, Yanfeng|
同期刊论文项目
反常带隙半导体量子受限结构中自旋特性的调控
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