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Quantum tunneling through planar p-n junctions in HgTe quantum wells
  • ISSN号：1367-2630
  • 期刊名称：New Journal of Physics
  • 时间：2010.8.8
  • 页码：-
  • 相关项目：反常带隙半导体量子受限结构中自旋特性的调控
作者： Zhang, L. B.|Chang, Kai|Xie, X. C.|Buhmann, H.|Molenkamp, L. W.|
同期刊论文项目
反常带隙半导体量子受限结构中自旋特性的调控
期刊论文 80
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