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Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structur
  • ISSN号：1098-0121
  • 期刊名称：Physical Review B
  • 时间：2010.6.6
  • 页码：-
  • 相关项目：反常带隙半导体量子受限结构中自旋特性的调控
作者： Zhang, L. B.|Zhai, Feng|Chang, Kai|
同期刊论文项目
反常带隙半导体量子受限结构中自旋特性的调控
期刊论文 80
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