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Interface-Induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells
  • ISSN号：0031-9007
  • 期刊名称：Physical Review Letters
  • 时间：2013.10.10
  • 页码：-
  • 相关项目：反常带隙半导体量子受限结构中自旋特性的调控
作者： Zhang, Dong|Lou, Wenkai|Miao, Maosheng|Zhang, Shou-cheng|Chang, Kai|
同期刊论文项目
反常带隙半导体量子受限结构中自旋特性的调控
期刊论文 80
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