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Band alignment of Ga2O3/6H-SiC heterojunction
  • ISSN号：1674-1056
  • 期刊名称：CHINESE PHYSICS B
  • 时间：2011.11.11
  • 页码：116101-116104
  • 相关项目：氧化锌基稀磁半导体薄膜反常霍尔效应与磁输运性能研究
作者： Chang Shao-Hui|Chen Zhi-Zhan|Huang Wei|Liu Xue-Chao|Chen Bo-Yuan|Li Zheng-Zheng|Shi Er-Wei|
同期刊论文项目
氧化锌基稀磁半导体薄膜反常霍尔效应与磁输运性能研究
期刊论文 23 会议论文 2 专利 3
同项目期刊论文
The surface morphological evolution of ultrathin SiC buffer layer grown on Si (100) substrate by atm
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The dual effects of Al-doping on the ferromagnetism of Zn0.98-yEr0.02AlyO thin films
Effects of substrate crystallinity on the on-state resistance of 6H-SiC photoconductive switches
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(Cu,Al)掺杂ZnO薄膜表面处缺陷的拉曼光谱研究
Defects mediated ferromagnetism in a V-doped 6H-SiC single crystal
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Multi-roles of Cu ions in the ferromagnetic properties of (Cu, Al)-codoped ZnO thin films
Direct Observation of Nanoscale Native Oxide on 6H-SiC Surface and Its Effect on the Surface Band Be
Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films
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Effect of propane/silane ratio on the growth of 3C-SiC thin films on Si(100) substrates by APCVD
Influence of surface bow on reconstruction on 2-inch SiC (0001) wafer
碳化温度对异质外延3C-SiC薄膜结晶质量及表面形貌的影响
Ar气氛下退火处理对6H-SiC晶片表面结构的影响
Room-temperature anomalous Hall effect and magnetroresistance in （Ga, Co）-codoped ZnO diluted magnetic semiconductor films
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406