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Investigation of room temperature ferromagnetism of 3C-SiC by vandium carbide doping
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2012.10.10
  • 页码：142404-142406
  • 相关项目：氧化锌基稀磁半导体薄膜反常霍尔效应与磁输运性能研究
作者： Hui Wang|Cheng-Feng Yan|Hai-Kuan Kong|Jian-Jun Chen|Jun Xin|Er-Wei Shi|
同期刊论文项目
氧化锌基稀磁半导体薄膜反常霍尔效应与磁输运性能研究
期刊论文 23 会议论文 2 专利 3
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