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Study of Nitrogen concentration in silicon caribde
  • ISSN号：0361-5235
  • 期刊名称：Journal of Electronic Materials
  • 时间：2013.1.1
  • 页码：1037-1040
  • 相关项目：氧化锌基稀磁半导体薄膜反常霍尔效应与磁输运性能研究
作者： Hui Wang，Cheng-Feng Yan，Hai-Kuan Kong，Jian-Jun Che|
同期刊论文项目
氧化锌基稀磁半导体薄膜反常霍尔效应与磁输运性能研究
期刊论文 23 会议论文 2 专利 3
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