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Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing
ISSN号:1674-1056
期刊名称:CHINESE PHYSICS B
时间:2012.9.9
页码:096801-096804
相关项目:氧化锌基稀磁半导体薄膜反常霍尔效应与磁输运性能研究
作者:
Chang Shao-Hui|Liu Xue-Chao|Huang Wei|Xiong Ze|Yang Jian-Hua|Shi Er-Wei|
同期刊论文项目
氧化锌基稀磁半导体薄膜反常霍尔效应与磁输运性能研究
期刊论文 23
会议论文 2
专利 3
同项目期刊论文
The surface morphological evolution of ultrathin SiC buffer layer grown on Si (100) substrate by atm
Oxygen enhanced ferromagnetism in Cr-doped ZnO films
Defects enhanced ferromagnetism in Cu-doped ZnO thin films
The dual effects of Al-doping on the ferromagnetism of Zn0.98-yEr0.02AlyO thin films
Effects of substrate crystallinity on the on-state resistance of 6H-SiC photoconductive switches
Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnet
Band alignment of Ga2O3/6H-SiC heterojunction
Study of Nitrogen concentration in silicon caribde
Investigation of room temperature ferromagnetism of 3C-SiC by vandium carbide doping
非磁性元素掺杂ZnO稀磁半导体研究进展
(Cu,Al)掺杂ZnO薄膜表面处缺陷的拉曼光谱研究
Defects mediated ferromagnetism in a V-doped 6H-SiC single crystal
Multi-roles of Cu ions in the ferromagnetic properties of (Cu, Al)-codoped ZnO thin films
Direct Observation of Nanoscale Native Oxide on 6H-SiC Surface and Its Effect on the Surface Band Be
Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films
Influence of Ga doping on the Cr valence state and ferromagnetism in Cr: ZnO films
Effect of propane/silane ratio on the growth of 3C-SiC thin films on Si(100) substrates by APCVD
Influence of surface bow on reconstruction on 2-inch SiC (0001) wafer
碳化温度对异质外延3C-SiC薄膜结晶质量及表面形貌的影响
Ar气氛下退火处理对6H-SiC晶片表面结构的影响
Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films
期刊信息
《中国物理B:英文版》
中国科技核心期刊
主管单位:中国科学院
主办单位:中国物理学会和中国科学院物理研究所
主编:欧阳钟灿
地址:北京 中关村 中国科学院物理研究所内
邮编:100080
邮箱:
电话:010-82649026 82649519
国际标准刊号:ISSN:1674-1056
国内统一刊号:ISSN:11-5639/O4
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被引量:406