中文摘要：

室温下，利用磁控溅射方法在P型Si（100）衬底上沉积了铜（Cu）膜。采用x射线衍射（XRD）和卢瑟福背散射（RBS）分析了未退火以及在不同温度点退火后的样品，研究了Cu／SiO2/Si（100）体系的扩散和界面反应。RBS分析得出：对于Cu／SiO2/Si（100）体系，当退火温度高于350℃时，才产生明显的扩散，并且随着温度的升高，体系扩散越明显；当退火温度在450℃以下时，XRD没有测得铜硅化合物生成；当温度到500℃时才有铜硅化合物生成。这比已有文献报道的温度低。

英文摘要：

The Cu thin films were deposited on P-Si（ 100 ） substrates by magnetron sputtering at room temperature. The interface reaction and diffusion of Cu/SiO2/Si （100） systems were studied at different temperatures by X-ray diffraction （ XRD ） and Rutherford backscattering （ RBS ）. The results showed that onset temperature of interdiffusion was 350 ℃ for the Cu/SiO2/Si（100） systems. With the increase of temperature, the interdiffusion was more apparent. There were no copper silicides formed at annealing temperature of 450 ℃ for the Cu/SiO2/Si（ 100 ） systemms. The onset temperature of silicification was 500 ℃, which was lower than that of other literatures reported.