中文摘要：

室温下利用磁控溅射在P型Si（111）衬底上沉积了Cu薄膜．利用X射线衍射和卢瑟福背散射分别对未退火以及在不同温度点退火后样品的结构进行了表征．在此基础上，研究了Cu／SiO2／Si（111）体系的扩散和界面反应．实验结果表明：当退火温度高于450℃时出现明显的扩散现象，并且随着温度的升高，体系扩散现象会更加显著．当退火温度低于450℃时没有铜硅化合物生成，当温度达到500℃时才有铜硅化合物生成．

英文摘要：

The Cu thin films were deposited on p-type Si （111） substrates by magnetron sputtering at room temperature. The diffusion and interface reaction of Cu/SiO2/Si （ 111） systems were studied for different annealing temperatures by X-ray diffraction （XRD） and Rutherford backscattering （RBS）. We obtained some useful results in the following aspects： The onset temperature of interdiffusion was 450 ℃ for the Cu/SiO2/Si （111 ） systems. With the increase of annealing temperature, the interdiffusion was more apparent. There were no copper silicidcs formed below annealing temperature of 450 ℃ for the Cu/SiO2/Si （ 111 ） systems. The onset temperature of silicification was 500 ℃. Copper silicides were formed on the samples after annealing at 500 ℃.