中文摘要：

用中子发生器上D—D反应的2．5MeV中子辐照Co掺杂ZnO和对照样品纯ZnO单晶。室温下测量了样品的X射线衍射谱、光致发光谱和透射光谱。结果表明，快中了辐照后的纯ZnO单晶中引入了氧空位（Vo）和氧错位（OZn）缺陷，且有少量的锌填隙（Zni）和氧填隙（Oi）缺陷。Co掺杂ZnO中存在的Co以及钴氧化物纳米团簇由于快中子轰击而分解消失。快中子与替代Zn^2＋的Co^2＋的碰撞导致大量的Co^2＋离开ZnO晶格点位，导致Co掺杂ZnO中引入钴填隙杂质和锌空位（VZn）缺陷。中子辐照后的所有样品依然呈纤锌矿结构并沿c轴高度择优取向。表明纯ZnO和掺Co氧化锌半导体材料具有良好的抗辐照性能，在空间器件方面具有应用潜力，且有助于在ZnO点缺陷方面的研究。

英文摘要：

Co-doped ZnO and as-grown ZnO single crystals were irradiated by 2.5 MeV neutrons from D-D reaction on a neutron generator, and the structural and optical properties were investigated by X-ray diffraction （XRD）, photoluminescence （PL） and optical transmittance at room temperature. The results indicated that a great number of defects of oxygen vacancies （Vo） and antisite oxygen （OZn） were introduced in the as-grown ZnO, and a few defects of interstitial zinc （Zni） and interstitial oxygen （Oi） were introduced after irradiation. The nanoclusters of metallic cobalt and cobalt oxides in the Co-doped ZnO disappeared after the neutron irradiation, and a great many Co^2＋ ions substituted for Zn^2＋ ions moved away probably from the lattice site due to the fast-neutron collision. The defects of interstitial cobalt impurities and zinc vacancies （VZn） were formed in the Co-doped ZnO irradiated by fast neutrons. The fast-neutron-irradiated samples are still ofwurtzite structure and in c-axis orientation. This work shows that ZnO and Co-doped ZnO semiconductors have great radiation hardness, hence their potential of space applications, and the findings are of help in studying point defects of ZnO.