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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2011.5.5
  • 页码：0931171-0931174
  • 相关项目：紫外-红外双色探测材料和器件新原理研究
作者： Zhu, J.H.|Zhang, S.M.|Wang, H.|Zhao, D.G.|Zhu, J.J.|Liu, Z.S.|Jiang, D.S.|Qiu, Y.X.|Yang, H.|
同期刊论文项目
紫外-红外双色探测材料和器件新原理研究
期刊论文 55
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