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Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2012.12.12
  • 页码：113105-1131055
  • 相关项目：紫外-红外双色探测材料和器件新原理研究
作者： Yang, H.|Feng, M.X.|Jiang, D.S.|Zhao, D.G.|Liu, Z.S.|Li, L.|Wu, L.L.|Le, L.C.|Zhu, J.J.|
同期刊论文项目
紫外-红外双色探测材料和器件新原理研究
期刊论文 55
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