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Positive and negative effects of oxygen in thermal annealing of p-type GaN
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：2012.8.8
  • 页码：1-3
  • 相关项目：紫外-红外双色探测材料和器件新原理研究
作者： Yang, H.|Zhao, D.G.|Jiang, D.S.|Chen, P.|Le, L.C.|Li, L.|Liu, Z.S.|Zhang, S.M.|Zhu, J.J.|
同期刊论文项目
紫外-红外双色探测材料和器件新原理研究
期刊论文 55
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