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High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
  • ISSN号：1882-0778
  • 期刊名称：Applied Physics Express
  • 时间：2012.1.1
  • 页码：0155021-0155023
  • 相关项目：紫外-红外双色探测材料和器件新原理研究
作者： Shen, Bo|Liu, Shitao|Ma, Nan|Feng, Li|Chen, Guang|Xu, Fujun|Tang, Ning|Huang, Sen|Chen, Kevin J.|
同期刊论文项目
紫外-红外双色探测材料和器件新原理研究
期刊论文 55
同项目期刊论文
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Effects of Al 0.3 Ga 0.7 As interlayer with pulsed atomic layer epitaxy on heterogeneous integration
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Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitti
Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifeti
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Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer
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Simulation of the light extraction efficiency of nanostructure light-emitting diodes
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ult
Temperature sensitive photoconductivity observed in InN layers
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Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films
Terahertz intersubband transition in GaN/AlGaN step quantum well
Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed
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Vacancy-type defects in InxGa1-xN alloys probed using a monoenergetic positron beam
Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Prope
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Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current
Effect of light Si-doping on the near-band-edge emissions in high quality GaN
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