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High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN in
  • ISSN号：0925-8388
  • 期刊名称：Journal of Alloys and Compounds
  • 时间：2011.2.2
  • 页码：2227-2231
  • 相关项目：紫外-红外双色探测材料和器件新原理研究
作者： Hao, Y.|Fang, Y.-Y.|Dai, J.N.|Zhang, L.|Su, C.Y.|Wu, Z.H.|Yu, C.H.|Xiong, H.|Chen, C.Q.|
同期刊论文项目
紫外-红外双色探测材料和器件新原理研究
期刊论文 55
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