介绍了一种采用NaOH-NaClO混合腐蚀液制备多晶硅绒面的新方法。研究结果表明,当VNaOH:VNaClO=1:3,NaOH浓度为17%,腐蚀温度为80℃,腐蚀时间为20min时,能够得到均匀的沟壑状凹坑多晶硅绒面,腐蚀后硅片表面的反射率与未腐蚀的硅片表面的反射率相比,降低近30%。另外,与传统的HF:HNO3酸腐蚀工艺相比,这种新型腐蚀工艺不仅可以获得反射率更低的多晶硅绒面结构,而且反应过程中产生的具有高度活性的氯离子可以作为很好的吸杂剂,降低一些有害的金属杂质的活性以提高太阳电池的开路电压,同时也省去了在产业化生产过程中的盐酸处理,从而改善了生产环境。
A novel and environmental texture process based on a composition of sodium hydroxide(NaOH) and sodium hypochlorite(NaClO) solution for multicrystalline silicon was introduced.Results indicate that uniform and sulciform texture on the surface multicrystalline silicon can be obtained with the following etching conditions:VNaOH:VNaClO=1:3,17% NaOH,80 ℃ temperature,and the etching time of 20 min.The texture surface reflectance of as-grown wafers nearly reduces by 30%.And compared with wafers fabricated with the traditional industrial acid process,not only lower reflectance but also highly reactive chloride ion(Cl-) which can be used as gettering agent can be obtained.In addition,the procedure of HCl disposal can be omitted in the process of industrialization,and the operation environment can be improved greatly.