中文摘要：

用射频磁控溅射法制备了Ta2O5高介电薄膜,并对其进行了退火处理。用C-V,（G/ω）-V和I-V方法研究了Al/Ta2O5/p-Si结构的电学特性,观测到了C-V和（G/ω）-V的频散效应。认为串联电阻、Si/Ta2O5界面的界面态密度、边缘俘获是频散效应的主要原因,提取了界面态密度和边缘俘获电荷的大小。同时也研究了不同的退火温度对这些参数以及漏电流的影响,经600℃退火后,样品的电容最大,俘获电荷密度和漏电流最小,器件的电学性能最佳。

英文摘要：

High permittivity Ta2O5 thin films were deposited by radio-frequency magnetron sputtering and subsequent annealing.The electrical characteristics of the Al/Ta2O5/p-Si structure were investigated by C-V,（G/ω）-V,and I-V methods.The frequency dispersion effect was observed in C-V and（G/ω）-V curves.The series resistance,interface state density of the Si/Ta2O5 interface and border trap charges were considered as the main reason,and the interface state and border trap charges were obtained.The difference of these factors and the leakage current were also studied by annealing temperature process.The results show that an annealing treatment at 600 ℃ results in the highest capacitance and the lowest trapped charge density and leakage current in Ta2O5 film.