位置：成果数据库 > 期刊 > 期刊详情页
An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2011.2.2
  • 页码：073504-
  • 相关项目：基于量子效应的探测光电信号放大机理研究
作者： Zhen, H. L.|Zhou, X. H.|Zhou, X. H.|Li, N.|Li, N.|Lu, W.|Lu, W.|Liu, F. Q.|Liu, F. Q.|
同期刊论文项目
基于量子效应的探测光电信号放大机理研究
期刊论文 65
同项目期刊论文
Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded l
Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamm
An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Sh
离子束溅射Ge量子点的应变调制生长
离子束溅射自组装Ge/Si量子点生长的演变
绝缘氧化层上自离子注入Si薄膜W线发光性能的调控
Dielectric measurements via a phase-resolved spintronic technique
Evolution of self-assembled Ge/Si island grown by ion beam sputtering deposition
束流密度对Ge/Si量子点溅射生长的影响
斜切基片上溅射生长高密度小尺寸Ge纳米点的研究
The optical coupling improvement of THz quantum well infrared photodetectors based on the plasmonic
Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model
Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron bloc
Measurements of I-V characteristic in InAs/InP quantum dot laser diode
Sources of carrier compensation in arsenic-doped HgCdTe
Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy
温度对绝缘层上应变SiGe沟道p-MOSFET电学特性的影响
埋层应变对溅射生长 Ge 量子点的影响
渐变带隙氢化非晶硅锗薄膜太阳能电池的优化设计
SiGe∶H薄膜太阳能电池研究进展
Ge纳米粒子制备技术的研究进展
甚长波量子阱红外探测器中的双激发态工作机理
Room temperature quantum cascade detector operating at 4.3μm
采用InGaP和InAlP作为虚衬底的张应变Ge薄膜的材料性质比较
溅射气压对Ge/Si纳米点表面形貌的影响
Ge／Si量子点的控制生长
Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n- to p-layers
两步法溅射中缓冲层厚度对Ge薄膜质量的影响
镶嵌在SiO_2基体中SiC纳米晶的紫外光致发光
热退火诱导C^＋注入Si晶体的蓝光发射